Method for producing solid electrolytic capacitor

ABSTRACT

A method for manufacturing large capacitance solid electrolytic capacitors that can be connected direct with semiconductor component, and offer a superior high frequency characteristic. An aluminum foil  3  is made porous in one of the surfaces, a dielectric layer  2  is formed on the porous portion, a through hole  4  is provided in the aluminum foil  3  at a certain specific location. An insulation layer  5  is formed to cover the other surface, viz. non-porous surface, of the aluminum foil  3  and the inner wall surface of through hole  4 , a solid electrolytic layer  6  is provided on the dielectric layer  2,  and a through hole electrode  7  is formed in the through hole  4 , and then a collector layer  8  is formed on the solid electrolytic layer  6 . The insulation layer  5  disposed on aluminum foil  3  is provided with an opening  9  at a certain specific location, and a connection terminal  10  is provided at the opening  9  of insulation layer  5  and the exposed surface of the through hole electrode  7 , respectively.

TECHNICAL FIELD

[0001] The present invention relates to a method for manufacturing solidelectrolytic capacitor for use in various kinds of electronic apparatus.

BACKGROUND ART

[0002] In line with the recent trends of downsizing and introduction ofhigher frequencies among the electronic apparatus, capacitors arerequested to be compact yet to have a larger capacitance, a lower ESR(Equivalent Series Resistance) and a lower ESL (Equivalent SeriesInductance).

[0003] As to the technology for increasing capacitance of a solidelectrolytic capacitor (hereinafter referred to as SEC), the U.S. Pat.No. 5,377,073 and the Japanese Patent Laid-open No. H11-274002 disclosea technology of laminating capacitor elements in a chip-type capacitor.Thus the conventional SECs can be increased in the capacitance, andimproved in the ESR.

[0004] However, when mounting the conventional SECs on the surface of acircuit board like semiconductor components, the SECs need the help ofexternal terminals for connection. This way of connection poses alimitation in the improvement of ESL. In order to further reduce theESL, shapes and length of terminals for electrical connection and thewirings need to be streamlined. The present invention addresses theabove problems, and aims to offer a method for manufacturing largecapacitance SECs that can be connected direct with semiconductorcomponents and implement a superior high frequency response.

DISCLOSURE OF THE INVENTION

[0005] A method for manufacturing SEC in accordance with the presentinvention comprises the steps of forming a porous portion on one of thesurfaces of an aluminum foil, forming a dielectric layer on said porousportion, forming a through hole at a certain specific location of saidaluminum foil, forming an insulation layer on said aluminum foilcovering the other surface which is opposite to the one having saidporous portion and the inner wall surface of said through hole, forminga solid electrolytic layer on said dielectric layer, forming a throughhole electrode in said through hole, forming a collector layer on saidsolid electrolytic layer, forming an opening at a certain specificlocation of said insulating layer provided on said aluminum foil, andforming a connection terminal in said opening and on the exposed surfaceof said through hole electrode. Since the connection terminals providedin the opening of insulation layer and on the exposed surface of throughhole electrode are disposed on a same plane, the SEC can be connecteddirect with semiconductor component and offers a superior high frequencycharacteristic.

BRIEF DESCRIPTION OF THE DRAWINGS

[0006]FIG. 1 is a perspective view of an SEC manufactured in accordancewith a first exemplary embodiment of the present invention.

[0007]FIG. 2 is a cross sectional view of an SEC in the firstembodiment.

[0008]FIG. 3 is a cross sectional magnified view of an SEC, showing thekey portion in the first embodiment.

[0009]FIG. 4 is a cross sectional view of aluminum foil of an SEC,showing a state after chamfering in the first embodiment.

[0010]FIG. 5 is a cross sectional view of aluminum foil of an SEC,showing a state after an insulation layer was formed covering thenon-porous surface and the inner wall surface of through hole in thefirst embodiment.

[0011]FIG. 6 is a cross sectional view of aluminum foil of an SEC,showing a state after a solid electrolytic layer was formed ondielectric layer in the first embodiment.

[0012]FIG. 7 is a cross sectional view of an SEC, showing a state aftera through hole electrode was formed in the through hole in the firstembodiment.

[0013]FIG. 8 is a cross sectional view of an SEC, showing a state aftera collector layer was formed on solid electrolytic layer in the firstembodiment.

[0014]FIG. 9 is a cross sectional view of an SEC, showing a state afteran opening was formed in the insulation layer in the first embodiment.

[0015]FIG. 10 is a cross sectional view of an SEC, showing a state aftera connection terminal was formed in the opening in the first embodiment.

[0016]FIG. 11 is a cross sectional view of capacitor elements of an SEC,showing a state after a package was provided in the first embodiment.

[0017]FIG. 12 is a cross sectional view of an SEC, showing a state afterexternal terminals were provided on the package, as well as connectionbumps, in the first embodiment.

[0018]FIG. 13 is a cross sectional view of an SEC, showing a state aftera resist film was provided on the insulation layer in a second exemplaryembodiment.

[0019]FIG. 14 is a cross sectional view of an SEC, showing a state ofresist film after patterning in the second embodiment.

[0020]FIG. 15 is a cross sectional view of an SEC, showing a state aftera through hole electrode was formed in the through hole in a thirdexemplary embodiment.

[0021]FIG. 16 is a cross sectional view of an SEC, showing a state aftera solid electrolytic layer was formed on the dielectric layer in thethird embodiment.

[0022]FIG. 17 is a cross sectional view of an SEC, showing a state afteran insulation layer was formed on the non-porous surface of aluminumfoil and an insulation portion was provided in the through hole in afourth exemplary embodiment.

[0023]FIG. 18 is a cross sectional view of an SEC, showing a state aftera solid electrolytic layer was formed on the dielectric layer in thefourth embodiment.

[0024]FIG. 19 is a cross sectional view of an SEC, showing a state aftera through hole was formed in the insulation portion in the fourthembodiment.

BEST MODE FOR CARRYING OUT THE INVENTION

[0025] A solid electrolytic capacitor (SEC) and the method ofmanufacture in accordance with exemplary embodiments of the presentinvention are described referring to the drawings. The drawings areaimed to present the concepts, not to exhibit precise dimensions.

[0026] (Embodiment 1)

[0027] Reference is made to FIG. 1-FIG. 3, in a sheet-formed capacitorelement 1, one of the surfaces of an aluminum foil 3 is made porous byetching or the like process, a dielectric layer 2 is formed on theporous portion, and a through hole 4 is formed in the aluminum foil 3 ata certain specific location. An insulation layer 5 is provided to coverthe other surface, viz. non-porous surface, of the aluminum foil 3 andthe inner wall surface of through hole 4, and a solid electrolytic layer6 is formed on the dielectric layer 2. A through hole electrode 7 isformed in the through hole 4, and then a collector layer 8 is formed onthe solid electrolytic layer 6. Next, the insulation layer 5 on aluminumfoil 3 is provided with an opening 9 at a certain specific location, andthe surface exposed by the opening 9 is provided with a connectionterminal 10. The through hole electrode refers to an electrode formed inthe through hole.

[0028] The capacitor element 1 thus structured is provided with apackage 11 covering the side surfaces and the collector layer 8. A firstexternal terminal 12, which is electrically connected with the aluminumfoil 3, and a second external terminal 13, which is electricallyconnected with the collector layer 8, are provided on the package 11,and then a connection bump 14 is provided on the through hole electrode7 and the connection terminal 10, respectively. A finished SEC is thuscompleted. In the following, a method for manufacturing SEC in thepresent invention is described referring to the drawings FIG. 4 throughFIG. 12.

[0029] The aluminum foil 3 with dielectric layer 2 is provided byetching one of the surfaces of an aluminum foil 3 to make it porous, andthen forming a dielectric oxide film thereon through anode oxidizationin a electrolytic solution. And then, the aluminum foil 3 is providedwith a through hole 4 at a certain specific location, as shown in FIG.4.

[0030] The through holes can be formed altogether by means of a wetetching process. Besides the wet etching, a finer through hole of 100 μmor smaller can be formed at a high precision level by using a laser beammachining, a punching method, a drilling method, an electric dischargemachining, or the like means. The above methods are applicable to anykinds of materials. When forming the through holes by wet etchingprocess, an aluminum foil 3 is etched after the foil is provided at bothsurfaces with resist film having openings at places corresponding to thethrough holes, and then the resist film is removed. If edge of thethrough hole at the surface to be facing to dielectric layer 2 ischamfered by means of wet etching or the like process, it contributes tofurther improve the reliability of an insulation layer, which will beprovided at a later step. Next, by applying an insulating film throughelectrodeposition, an insulation layer 5 is formed to cover the othersurface, viz. non-porous surface, of the aluminum foil 3 and the innerwall surface of through hole 4, as shown in FIG. 5. Although theelectrodeposition provides an even and intense insulation layer, thereis a possibility that the thickness of the layer turns out to beslightly thinner at the edge of through hole 4 facing the dielectriclayer 2. The edge chamfering is effective for eliminating the risk andimplementing a higher insulating reliability. Application of aninsulating resin containing a micro gel of high edge-covering property,carbon particles and titanium oxide particles through electrodepositionis quite advantageous. The micro gel referred to in the present exampleis a polymer added with a polymer substance of particle diameter 10 μmor smaller to increase the viscosity and lower the fluidity; therebyimproving the edge-covering property. However, if a resin mixture ofhigh edge-covering property is electrodeposited onto the inner wallsurface of fine through hole of 100 μm or smaller, the deposited layermay become too thick and clog the through hole. Therefore, it is advisedto split the electrodepostion into two stages; first attaching a thinfilm of a high resistively resin and then an insulating resin which is amixture of a micro gel of high edge-covering property, carbon particlesand titanium oxide particles. By so doing, an insulation layer 5 of lowfailure rate is provided on the inner wall surface of through hole.Then, as shown in FIG. 6, a solid electrolytic layer 6 is formed on thedielectric layer 2. The solid electrolytic layer 6 can be formed througha chemical polymerization or an electrolytic polymerization of a πelectron conjugated polymer such as polypyrrole, polythiophene, and/or acomposite material containing a conducting polymer other than that; orby combining these. Besides the above-described process, it can beformed by applying a suspension of conducting polymer and drying it, andthen conducting an electrolytic polymerization; or, by impregnating itwith manganese nitrate and then heat-decomposing it to generatemanganese dioxide, and then conducting an electrolytic polymerization. Afurther established technology available for forming a solidelectrolytic layer is forming manganese dioxide by heat-decomposingmanganese nitrate. Thus, the productivity and the reliability can beimproved by selecting an appropriate process that provides an intenselayer at an optional thickness.

[0031] Next, a process for forming a through hole electrode 7 in thethrough hole 4, as shown in FIG. 7, is described. The through hole isfilled with a conducting adhesive substance such as Ag paste, Cu paste,etc. containing conductive particles; and then it is cured to form thethrough hole electrode 7. And then, a collector layer 8 is formed on thesolid electrolytic layer 6, as shown in FIG. 8. The collector layer 8 isformed by using a suspension of carbon particles and a conductingadhesive material containing a silver past as the main ingredient, intoa laminate structure of a carbon layer and a silver paste layer. Thestructure efficiently makes the electrical charges available. Then, asshown in FIG. 9, the insulation layer 5 formed on the other surface ofaluminum foil 3 is provided with an opening 9 at a certain specificlocation, by means of YAG laser or other process such as grinding.Besides the above method, the opening 9 can be formed also by otherprocess; namely, providing a resist portion on the aluminum foil 3before formation of insulation layer 5 at a certain specific place onthe non-porous surface, and forming a collector layer 8 and aninsulation layer 5, and then removing the resist portion. Then, aconnection terminal 10 is formed on the surface exposed through theopening 9 of insulation layer 5, as shown in FIG. 10, using a conductiveadhesive substance, or by an electroplating or electroless plating. Thecapacitor element 1 is covered with an epoxy resin package 11, as shownin FIG. 11, for protecting it from humidity and stress from outside andensuring good electrical insulation and increasing the reliability. Thepackage 11 is provided with a first external terminal 12, which iselectrically connected with the aluminum foil 3, and a second externalterminal 13, which is electrically connected with the collector layer 8,to complete a finished capacitor element 1.

[0032] The component of above-described structure functions as it is asan SEC of the present invention. However, it is preferred to furtherprovide connection bumps 14 on the connection terminal 10 and thethrough hole electrode 7, in order to raise the reliability inelectrical connection with a semiconductor component or the likeelectronic component, and to improve the electrical performance.

[0033] The SECs manufactured in accordance with the above-describedmanufacturing process have the connection terminals 10 and theconnection bumps 14 disposed respectively on a same plane. Thus thepresent invention offers a method for manufacturing SECs that can beconnected direct with semiconductor components, and superior in the highfrequency characteristic.

[0034] (Embodiment 2)

[0035]FIG. 13 and FIG. 14 are the drawings used to describe the mainprocess steps of manufacturing an SEC in accordance with a secondexemplary embodiment of the present invention.

[0036] One of the surfaces of an aluminum foil 3 is etched for making itporous, and a dielectric layer 2 is formed on the porous portion. Andthen, a through hole 4 is formed in the aluminum foil 3 at a certainspecific location, and an insulation layer 5 is provided to cover theother surface, viz. non-porous surface, of aluminum foil 3 and the innerwall surface of through hole 4.

[0037] So far, the procedure remains the same as in the embodiment 1.Next, when providing a solid electrolytic layer 6 on the dielectriclayer 2, if the through hole has a diameter 80 μm or larger the solidelectrolytic layer 6 could form on the other surface, viz. non-poroussurface, of aluminum foil 3.

[0038] In order to prevent this to happen, a photo sensitive resin isapplied on the surface of insulation layer 5, as shown in FIG. 13, byusing either of the methods among an immersion method, a spin coatingprocess and a screen printing method. The photo sensitive resin is curedto form a resist film 15.

[0039] Instead, an adhesive organic film may be used for the resist film15. In this case, a film is attached on the surface of insulation layer5. And then, the film is provided with a hole of certain specificdimensions at a location corresponding to the through hole 4, as shownin FIG. 14, by means of a photo processing or a mechanical machining.The film is used as the resist film. A solid electrolytic layer 6 and athrough hole electrode 7 are provided in the same way as in theembodiment 1, and then the resist film 15 is removed. Thus, no solidelectrolytic layer 6 is formed on the other surface, viz. non-poroussurface, of aluminum foil 3, and the positive electrode and the negativeelectrode are surely separated. Thereafter, in the same way as in theembodiment 1, a collector layer 8 is formed on the solid electrolyticlayer 6, an opening 9 is formed in the insulation layer 5 disposed onthe other surface of aluminum foil 3 at a certain specific location, anda connection terminal 10 is provided at the opening 9 of insulationlayer 5 and on the exposed surface of through hole electrode 7,respectively. Thus in an SEC manufactured in accordance with themanufacturing method of the present embodiment 2, a possible spreadingof the solid electrolytic layer onto the opening 9 of aluminum foil 3 isavoided, since the opening is formed at a later step, and the positiveelectrode and the negative electrode are certainly separated to eachother.

[0040] (Embodiment 3)

[0041]FIG. 15 and FIG. 16 are the drawings used to describe the mainprocess steps of manufacturing an SEC in accordance with a thirdexemplary embodiment of the present invention.

[0042] One of the surfaces of an aluminum foil 3 is etched for making itporous, and a dielectric layer 2 is formed on the porous portion. Andthen, a through hole 4 is formed in aluminum foil 3 at a certainspecific location, and an insulation layer 5 is provided to cover theother surface, viz. non-porous surface, of aluminum foil 3 and the innerwall surface of through hole 4.

[0043] So far, the procedure remains the same as in the embodiment 1.Next, when providing a solid electrolytic layer 6 on the dielectriclayer 2, if the through hole has a diameter 80 μm or larger the solidelectrolytic layer 6 could form on the other surface, viz. non-poroussurface, of aluminum foil 3.

[0044] In order to prevent this to happen, a through hole electrode 7 isfirst formed in the through hole 4, as shown in FIG. 15.

[0045] The through hole electrode 7 is formed by filling a conductiveadhesive substance such as Ag paste or Cu paste containing conductiveparticles, and curing it. And then, a solid electrolytic layer 6 isformed on the dielectric layer 2, as shown in FIG. 16. Therefore, nosolid electrolytic layer 6 can be formed on the other surface, viz.non-porous surface, of aluminum foil 3. And then, a collector layer 8 isformed on the solid electrolytic layer 6 in the same way as in theembodiment 1, and an opening 9 is formed in the insulation layer 5covering the surface of aluminum foil 3 at a certain specific locationby means of YAG laser, or the like process. The opening 9 can be formedinstead by providing a resist portion beforehand on the non-poroussurface of aluminum foil 3 using photo sensitive resin or the likematerial prior to formation of the insulation layer 5, and removing theresist portion after collector layer 8 is formed. And then, connectionterminal 10 is provided on the exposed surface at the opening 9 and onthe through hole electrode 7, respectively. Thus in an SEC manufacturedin accordance with the manufacturing method of the present embodiment 2,a possible spreading of the solid electrolytic layer onto the opening 9of aluminum foil 3 is avoided, since the opening is formed at a laterstep, and the positive electrode and the negative electrode arecertainly separated to each other.

[0046] (Embodiment 4)

[0047]FIG. 17 and FIG. 18 are the drawings used to describe the mainprocess steps of manufacturing an SEC in accordance with a fourthexemplary embodiment of the present invention.

[0048] One of the surfaces of an aluminum foil 3 is etched for making itporous, and a dielectric layer 2 is formed on the porous portion. Andthen, a first through hole 4 is formed in the aluminum foil 3 at acertain specific location. So far the procedure remains the same as inthe embodiment 1. Next, an insulation layer 5 is formed to cover theother surface, viz. non-porous surface, of aluminum foil 3 and the innerwall surface of through hole 4. And then, a solid electrolytic layer 6is provided on the dielectric layer 2. If the through hole has adiameter 80 μm or larger, the solid electrolytic layer 6 could form onthe other surface, viz. non-porous surface, of aluminum foil 3.

[0049] In order to prevent this to happen, an insulation layer 5 isformed on the other surface, viz. non-porous surface, of aluminum foil3, and an insulating portion 16 inside the first through hole, in thefirst place as shown in FIG. 17. The insulation layer 5 is formed in thesame way as in the embodiment 1. The insulating portion 16 can beprovided by electrodepositing an easy-to-fill insulating resin forseveral times to fill the through hole, or screen-printing or potting aninsulating resin. And then, as shown in FIG. 18, a solid electrolyticlayer 6 is formed on the dielectric layer. And, as shown in FIG. 19, asecond through hole 17 is formed inside the insulating portion 16. Whenthe above procedures are followed, no solid electrolytic layer 6 can beformed on the other surface, viz. non-porous surface, of aluminum foil3.

[0050] And then, in the same way as in the embodiment 1, a through holeelectrode 7 is formed in the second through hole 17, a collector layer 8is formed on the solid electrolytic layer 6, and then the insulationlayer 5 disposed on the aluminum foil 3 is provided with an opening 9 ata certain specific place, and a connection terminal 10 is provided atthe opening 9 of insulation layer 5 and on the exposed surface ofthrough hole electrode 7.

[0051] Thus in the method of manufacturing SEC in accordance with thepresent embodiment 4, the reliability in insulation between the throughhole electrode 7 and the aluminum foil 3 is improved, and a possiblespreading of solid electrolytic material onto the aluminum foil 3 at theopening 9 is prevented, to a sure separation between the positiveelectrode and the negative electrode.

[0052] Industrial Applicability

[0053] In the method for manufacturing SECs in accordance with thepresent invention, the connection terminals provided at the opening ofinsulation layer and on the exposed surface of through hole electrode,respectively, are disposed on a single flat plane. Thus the presentmethod of manufacture enables to manufacture with ease the largecapacitance SECs that can be connected direct with semiconductorcomponents and provide a superior high frequency characteristic.

What is claimed is:
 1. A method for manufacturing solid electrolyticcapacitor comprising the steps of; forming a porous portion on one ofthe surfaces of an aluminum foil, forming a dielectric layer on saidporous portion, forming a through hole in said aluminum foil at acertain specific location, forming an insulation layer on said aluminumfoil to cover both the other surface that is opposite to the one havingsaid porous portion and the inner wall surface of said through hole,forming a solid electrolytic layer on said dielectric layer, forming athrough hole electrode in said through hole, forming a collector layeron said solid electrolytic layer, forming an opening at a certainspecific place of said insulation layer disposed on said aluminum foil,and providing a connection terminal at said opening and on exposedsurface of said through hole electrode, respectively.
 2. A method formanufacturing solid electrolytic capacitor comprising the steps of;forming a porous portion on one of the surfaces of an aluminum foil,forming a dielectric layer on said porous portion, forming a throughhole in said aluminum foil at a certain specific location, forming aresist portion on said aluminum foil at a certain specific location,forming an insulation layer on said aluminum foil to cover both theother surface that is opposite to the one having said porous portion andthe inner wall surface of said through hole, forming a solidelectrolytic layer on said dielectric layer, forming a through holeelectrode in said through hole, forming a collector layer on said solidelectrolytic layer, forming an opening in said aluminum foil at acertain specific location by peeling said resist portion off, andproviding a connection terminal at said opening of said insulation layerand on exposed surface of said through hole electrode, respectively. 3.A method for manufacturing solid electrolytic capacitor comprising thesteps of; forming a porous portion on one of the surfaces of an aluminumfoil, forming a dielectric layer on said porous portion, forming athrough hole in said aluminum foil at a certain specific location,forming an insulation layer on said aluminum foil to cover both theother surface that is opposite to the one having said porous portion andthe inner wall surface of said through hole, forming a resist filmcovering the entire surface of said insulation layer, forming a solidelectrolytic layer on said dielectric layer, forming a through holeelectrode in said through hole, peeling said resist film off, forming acollector layer on said solid electrolytic layer, forming an opening insaid aluminum foil at a certain specific location, and providing aconnection terminal at said opening of said insulation layer and onexposed surface of said through hole electrode, respectively.
 4. Amethod for manufacturing solid electrolytic capacitor comprising thesteps of; forming a porous portion on one of the surfaces of an aluminumfoil, forming a dielectric layer on said porous portion, forming athrough hole in said aluminum foil at a certain specific location,forming a resist portion on said aluminum foil at a certain specificlocation, forming an insulation layer on said aluminum foil to coverboth the other surface that is opposite to the one having said porousportion and the inner wall surface of said through hole, forming aresist film covering the entire surface of said insulation layer,forming a solid electrolytic layer on said dielectric layer, forming athrough hole electrode in said through hole, peeling said resist filmoff, forming a collector layer on said solid electrolytic layer, formingan opening in said aluminum foil at a certain specific location bypeeling said resist portion off, and providing a connection terminal atsaid opening of said insulation layer and on exposed surface of saidthrough hole electrode, respectively.
 5. A method for manufacturingsolid electrolytic capacitor comprising the steps of; forming a porousportion on one of the surfaces of an aluminum foil, forming a dielectriclayer on said porous portion, forming a through hole in said aluminumfoil at a certain specific location, forming an insulation layer on saidaluminum foil to cover both the other surface that is opposite to theone having said porous portion and the inner wall surface of saidthrough hole, forming a through hole electrode in said through hole,forming a solid electrolytic layer on said dielectric layer, forming acollector layer on said solid electrolytic layer, forming an opening insaid aluminum foil at a certain specific location, and providing aconnection terminal at said opening of said insulation layer and onexposed surface of said through hole electrode, respectively.
 6. Amethod for manufacturing solid electrolytic capacitor comprising thesteps of; forming a porous portion on one of the surfaces of an aluminumfoil, forming a dielectric layer on said porous portion, forming a firstthrough hole in said aluminum foil at a certain specific location,forming an insulation portion on said aluminum foil to cover the othersurface that is opposite to the one having said porous portion and theinside of said first through hole, forming a solid electrolytic layer onsaid dielectric layer, forming a second through hole in said insulationportion, forming a through hole electrode in said second through hole,forming a collector layer on said solid electrolytic layer, forming anopening in said insulation layer disposed on said aluminum foil at acertain specific location, and providing a connection terminal at saidopening of said insulation layer and on exposed surface of said throughhole electrode, respectively.
 7. The method for manufacturing solidelectrolytic capacitor recited in claim 3 or claim 4, wherein saidresist film is formed of either a photo sensitive resin or an adhesiveorganic film.
 8. The method for manufacturing solid electrolyticcapacitor recited in claim 3 or claim 4, wherein said resist film isformed by using one of the methods among an immersing method, a spincoating process, a screen printing method and a film attaching method.9. The method for manufacturing solid electrolytic capacitor recited inone of claims 1 through 6, wherein said through hole is formed by aprocess where a photo-resist is applied on both of the surfaces, and itis wet-etched after the resists are patterned.
 10. The method formanufacturing solid electrolytic capacitor recited in one of claims 1through 6, wherein said through hole is formed by using one of themethods among a laser beam machining, a punching method, a drillingmethod and an electric discharge machining.
 11. The method formanufacturing solid electrolytic capacitor recited in one of claims 1through 6, wherein said dielectric layer is provided after edge of saidthrough hole is chamfered.
 12. The method for manufacturing solidelectrolytic capacitor recited in one of claims 1 through 6, whereinsaid insulation layer is formed by electrodeposition.
 13. The method formanufacturing solid electrolytic capacitor recited in one of claims 1through 6, wherein said insulation layer is consisting of a first layerof an insulating resin and a second layer of an insulating resin formedby mixing a micro gel, carbon particles and titanium oxide particles,electrodeposited.
 14. The method for manufacturing solid electrolyticcapacitor recited in one of claims 1 through 6, wherein said throughhole electrode is formed by first filling said through hole with aconducting adhesive substance and then curing it.
 15. The method formanufacturing solid electrolytic capacitor recited in one of claims 1through 6, wherein said opening is formed by using either a laser beammachining or a grinding method.
 16. The method for manufacturing solidelectrolytic capacitor recited in claim 5 or 6, wherein said opening isformed by the process in which a resist portion is provided onnon-porous surface of said aluminum foil prior to formation of saidinsulation layer, and then said resist portion is peeled off after saidcollector layer is formed.
 17. The method for manufacturing solidelectrolytic capacitor recited in one of claims 1 through 6, whereinsaid connection terminal is formed with a conducting adhesive substance.18. The method for manufacturing solid electrolytic capacitor recited inone of claims 1 through 6, wherein said connection terminal is formed byan electroplating or an electroless plating.
 19. The method formanufacturing solid electrolytic capacitor recited in one of claims 1through 6, wherein said solid electrolytic layer is formed of acomposite material containing at least one among a π electron conjugatedpolymer and a conducting polymer other than that.
 20. The method formanufacturing solid electrolytic capacitor recited in one of claims 1through 6, wherein said solid electrolyte is a conducting polymer formedby at least one of the processes among the chemical polymerization andthe electrolytic polymerization.
 21. The method for manufacturing solidelectrolytic capacitor recited in one of claims 1 through 6, whereinsaid solid electrolyte is a conducting polymer formed by applying asuspension of powdered conducting polymer, and drying it, and thenelectrolytically polymerized.
 22. The method for manufacturing solidelectrolytic capacitor recited in one of claims 1 through 6, whereinsaid solid electrolyte is manganese dioxide formed by heat-decomposingmanganese nitrate.
 23. The method for manufacturing solid electrolyticcapacitor recited in one of claims 1 through 6, wherein said solidelectrolyte is a conducting polymer formed by electrolyticpolymerization after manganese dioxide is obtained by heat-decompositionof manganese nitrate.
 24. The method for manufacturing solidelectrolytic capacitor recited in one of claims 1 through 6, whereinsaid collector layer is formed with a carbon particle suspension and aconducting adhesive substance.